Our Expertise – Our Experience

MICROWAVE PLASMA SOURCE TECHNOLOGY

  • Deposition of ceramic and organic layers or hybrids
  • High deposition rates up to plasma densities of 1012 cm-3
  • Extended production cycles through advanced plasma source design
  • Wide operational pressure range (10-3 mbar to 10 mbar)

DIAMOND DEPOSITION

  • Fully automated PECVD systems
  • Substrate stage - heated or cooled with z axis drives and rotation
  • Substrate temperature can be varied between 200°C and 750°C
  • Plasma source - layout as linear array, single or dual mode cavity

PVD - MAGNETRON SPUTTERING

  • Planar and rotating cathode technology
  • Access to intelligent DC – MF and RF, unipolar and bipolar power supplies
  • Customized target design